Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE-Reference-Cited by-同舟云学术

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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Published:2018-10 Issue: Volume:499 Page:40-46
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Matta Samuel,Brault Julien,Korytov Maxim,Phuong Vuong Thi Quynh,Chaix Catherine,Al Khalfioui Mohamed,Vennéguès Philippe,Massies Jean,Gil Bernard

Funder

ANR project

GANEX

French ANR agency

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference35 articles.

1. Ultraviolet light emitting diodes using III-N quantum dots

2. Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode

3. UV imaging based on AlGaN arrays

4. Ultraviolet light-emitting diodes in water disinfection

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical Composition, Structure, and Physical Properties of AlN Films Produced via Pulsed DC Reactive Magnetron Sputtering;Coatings;2023-07-21

2. Depth profiling of AlN and AlxGa1−xN crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source;Journal of Applied Physics;2023-01-17

3. Ultrawide-bandgap semiconductor AlN crystals: growth and applications;Journal of Materials Chemistry C;2021

4. UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots;Crystals;2020-11-30

5. Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors;Advanced Electronic Materials;2020-08-17

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