Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors-Reference-Cited by-同舟云学术

Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors

Published:2020-08-17 Issue:9 Volume:6 Page:2000337
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Wu Yuanpeng¹^ORCID,Laleyan David A.¹,Deng Zihao²,Ahn Chihyo¹,Aiello Anthony F.¹,Pandey Ayush¹,Liu Xianhe¹,Wang Ping¹,Sun Kai²,Ahmadi Elaheh¹,Sun Yi¹,Kira Mackillo¹,Bhattacharya Pallab K.¹,Kioupakis Emmanouil²,Mi Zetian¹^ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI 48109 USA

2. Department of Materials Science and Engineering University of Michigan Ann Arbor MI 48109 USA

Funder

National Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000337

Reference45 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. Monolayer GaN excitonic deep ultraviolet light emitting diodes

3. AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics

4. Photonics with hexagonal boron nitride

5. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial Optimization for AlN/Diamond Heterostructures via Machine Learning Potential Molecular Dynamics Investigation of the Mechanical Properties;ACS Applied Materials & Interfaces;2024-05-17

2. Effect of nitrogen flow ratio on the structure and optical properties of AlN film;Vacuum;2024-02

3. Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters;AIP Advances;2024-02-01

4. Formation of intrinsic point defects in AlN: a study of donor and acceptor characteristics using hybrid QM/MM techniques;Journal of Materials Chemistry A;2024

5. Highly Responsive Switchable Broadband DUV‐NIR Photodetector and Tunable Emitter Enabled by Uniform and Vertically Grown III–V Nanowire on Silicon Substrate for Integrated Photonics;Small;2023-12-25