Ultraviolet light emitting diodes using III-N quantum dots-Reference-Cited by-同舟云学术

Ultraviolet light emitting diodes using III-N quantum dots

Published:2016-11 Issue: Volume:55 Page:95-101
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Brault Julien,Matta Samuel,Ngo Thi-Huong,Rosales Daniel,Leroux Mathieu,Damilano Benjamin,Khalfioui Mohamed Al,Tendille Florian,Chenot Sébastien,De Mierry Philippe,Massies Jean,Gil Bernard

Funder

ANR

GANEX

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference40 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. Advances in group III-nitride-based deep UV light-emitting diode technology

3. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

4. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

5. Optical characteristics of hexagonal GaN self-assembled quantum dots: Strong influence of built-in electric field and carrier localization

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