Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN Template-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN Template

Published:2006-05-30 Issue:6 Volume:23 Page:1619-1622
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Xin-Jian Xie,Fei Zhong,Kai Qiu,Gui-Feng Liu,Zhi-Jun Yin,Yu-Qi Wang,Xin-Hua Li,Chang-Jian Ji,Qi-Feng Han,Jia-Rong Chen,Xian-Cun Cao

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference11 articles.

1. In situ investigation for polarity-controlled epitaxy processes of GaN and AlN in MBE and MOVPE growth

2. Reduced-stress GaN epitaxial layers grown on Si(111) by using a porous GaN interlayer converted from GaAs

3. Polarity selection process and polarity manipulation of GaN in MOVPE and RF-MBE growth

4. Two-step epitaxial lateral overgrowth of GaN

5. Epitaxial lateral overgrowth of GaN on selected-area Si(111) substrate with nitrided Si mask

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy;Chinese Physics B;2008-04

2. Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy;Chinese Physics Letters;2007-05

3. Effect of III/V Ratio of HT-AlN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy;Chinese Physics Letters;2007-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3