Two-step epitaxial lateral overgrowth of GaN
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
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1. Fabricating Ultralow Dislocation Density Microlight-Emitting Diodes on a Silicon Substrate via an Epitaxial Lateral Overgrowth Method;Crystal Growth & Design;2023-06-12
2. FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometry;Journal of Materials Science: Materials in Electronics;2021-05-04
3. Hydride Vapor Phase Epitaxy for Current III–V and Nitride Semiconductor Compound Issues;Handbook of Crystal Growth;2015
4. Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers;Solid-State Electronics;2011-08
5. Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask;Journal of Crystal Growth;2011-07
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