Epitaxial lateral overgrowth of GaN on selected-area Si(111) substrate with nitrided Si mask
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. The Blue Laser Diode—The Complete Story;Nakamura,2000
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1. Embedded void approach effects on intrinsic stresses in laterally grown GaN-on-Si substrate;Materials Science and Engineering: B;2019-03
2. AlGaN/GaN high-electron-mobility transistor with distributed gate grown on stripe-patterned Si(111) substrate;Japanese Journal of Applied Physics;2015-12-03
3. Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal;Small;2014-02-14
4. Prospects of III-nitride optoelectronics grown on Si;Reports on Progress in Physics;2013-10-01
5. Effect of dislocation density on microchannel epitaxy of GaAs on GaAs/Si substrate;Journal of Crystal Growth;2010-02
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