Structural characterization of V/Al/V/Au Ohmic contacts to n-type Al 0.4 Ga 0.6 N
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference17 articles.
1. AlGaN-based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW
2. Semiconductor ultraviolet detectors
3. Contact mechanisms and design principles for alloyed ohmic contacts to n-GaN
4. Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy
5. Structural and electrical characterization of AuTiAlTi/AlGaN/GaN ohmic contacts
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1. Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency;ECS Journal of Solid State Science and Technology;2017
2. Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer;Chinese Physics B;2015-11
3. Analysis and optimisation of ohmic contact resistance and surface morphology of a Ta-based diffusion barrier layer in AlGaN/GaN HEMTs on Si (111) substrates;Solid-State Electronics;2013-11
4. Improved Ohmic contacts to plasma etched n-Al0.5Ga0.5N by annealing under nitrogen ambient before metal deposition;Journal of Applied Physics;2013-03-07
5. Studies on the R-branch emission spectral lines of VN molecules;Acta Physica Sinica;2013
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