Contact mechanisms and design principles for alloyed ohmic contacts to n-GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1712016
Reference35 articles.
1. Emerging gallium nitride based devices
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3. Progress and prospects of group-III nitride semiconductors
4. Very low resistance multilayer Ohmic contact to n‐GaN
5. Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN
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