Interfacial and electrical characteristics of a HfO 2 /n–InAlAs MOS-capacitor with different dielectric thicknesses
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/12/126701/pdf
Reference15 articles.
1. InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
2. Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications
3. Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications
4. Tunable single-mode coupled-cavity laser in a standard InP photonics platform
5. Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
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