Author:
Moschetti Giuseppe,Wadefalk Niklas,Nilsson Per-Åke,Roelens Yannick,Noudeviwa Albert,Desplanque Ludovic,Wallart Xavier,Danneville Francois,Dambrine Gilles,Bollaert Sylvain,Grahn Jan
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Extremely low-noise amplification with cryogenic FETs and HFETs: 1970–2004;Pospieszalski;IEEE Microwave Mag,2005
2. Leuther A, Tessmann A, Kallfass, Losch R, Seelmann-Eggebert M, Wadefalk N, Schafer F, Gallego Puyol J, Schlechtweg M, Mikulla M, Ambacher O. Metamorphic hemt technology for low-noise applications. In: IEEE int conf on InP & related mater. IPRM ’09. May 2009. p. 188–91.
3. Bardin J, Weinreb S. Experimental cryogenic modeling and noise of SiGe HBTs. In: IEEE MTT-S int microw symp. June 2008. p. 459–62.
4. InAs/AlSb HEMT and its application to ultra-low-power wideband high-gain low-noise amplifiers;Ma;IEEE Trans Electron Dev,2006
5. Sb-HEMT: toward 100mV cryogenic electronics;Noudeviwa;IEEE Trans Electron Dev,2010