Metamorphic HEMT technology for low-noise applications-Reference-Cited by-同舟云学术

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Metamorphic HEMT technology for low-noise applications

Published:2009-05 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Conference on Indium Phosphide & Related Materials
language:
Short-container-title:

Author:

Leuther A.¹,Tessmann A.¹,Kallfass I.¹,Losch R.¹,Seelmann-Eggebert M.¹,Wadefalk N.²,Schafer F.³,Gallego Puyol J. D.⁴,Schlechtweg M.¹,Mikulla M.¹,Ambacher O.¹

Affiliation:

1. Fraunhofer Institute for Applied Solid-State Physics IAF, 79108 Freiburg, Germany

2. Chalmers University of Technology, Sweden

3. Max-Planck-Institut fur Radioastronomie, Germany

4. Centro Astronomico de Yebes, Observatorio Astronomico Nacional Spain

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4957851/5012404/05012475.pdf?arnumber=5012475

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1. Differential BroadBand (1–16 GHz) MMIC GaAs mHEMT Low-Noise Amplifier for Radio Astronomy Applications and Sensing;Sensors;2024-05-15

2. Theory of drain noise in high electron mobility transistors based on real-space transfer;Journal of Applied Physics;2022-02-28

3. Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy;Applied Physics Letters;2021-08-30

4. A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation;IEEE Transactions on Microwave Theory and Techniques;2021-08

5. Yebes 40 m radio telescope and the broad band Nanocosmos receivers at 7 mm and 3 mm for line surveys;Astronomy & Astrophysics;2021-01

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