Effect of the Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown on semi-insulating GaAs substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=7/a=077306/pdf
Reference16 articles.
1. Sub-50-nm $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ MOSFETs With Various Barrier Layer Materials
2. 0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode $\hbox{In}_{0.75}\hbox{Ga}_{0.25}\hbox{As}$ MOSFET
3. Photoluminescence and secondary ion mass spectrometry investigation of unintentional doping in epitaxial germanium thin films grown on III-V compound by metal-organic chemical vapor deposition
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1. Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress;Frontiers in Physics;2020-03-06
2. Comprehensive Analysis of Quantum Mechanical Effects of Interface Trap and Border Trap Densities of High-k Al2O3/In0.53Ga0.47As on a 300-mm Si Substrate;IEEE Access;2020
3. Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In0.53Ga0.47As on 300-mm Si Substrate;Scientific Reports;2019-07-08
4. Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al${}_{2}$O${}_{3}$ Dielectric;Chinese Physics Letters;2017-05
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