Equivalent distributed capacitance model of oxide traps on frequency dispersion of C – V curve for MOS capacitors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/11/118502/pdf
Reference25 articles.
1. A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer
2. Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces
3. Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters
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1. Effects of fluorine plasma pre-treatment on electrical properties of high-κ-based InP metal-oxide-semiconductor device;Applied Surface Science;2022-05
2. Trap Characterization of Atomic-Layer-Deposited Al-Incorporated HfO2 Films on In0.53Ga0.47As;ACS Applied Electronic Materials;2021-09-30
3. Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In0.53Ga0.47As on 300-mm Si Substrate;Scientific Reports;2019-07-08
4. Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition;Micromachines;2019-05-30
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