Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference20 articles.
1. Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation
2. Current and Future Challenges in Radiation Effects on CMOS Electronics
3. Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal–oxide–semiconductor field-effect transistors
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1. Degradation induced by hot carrier and cold carrier in 65‐nm NMOSFETs with enclosed gate and two‐edged gate layouts;Micro & Nano Letters;2018-08
2. Mechanism of single-event transient pulse quenching between dummy gate isolated logic nodes;Chinese Physics B;2015-01
3. Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFET;Acta Physica Sinica;2015
4. Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET;Chinese Physics B;2014-11
5. Research on single-event transient mechanism in a novel SOI CMOS technology;IEICE Electronics Express;2014
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