Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/11/117304/pdf
Reference25 articles.
1. Reliability of ultra-thin silicon dioxide under substrate hot-electron, substrate hot-hole and tunneling stress
2. Investigation and Modeling of Hot Carrier Effects on Performance of 45- and 55-nm NMOSFETs With RF Automatic Measurement
3. Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFET's
4. Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhanced channel hot carrier effect of 0.13 m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect;Acta Physica Sinica;2016
2. Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs;Chinese Physics Letters;2015-08
3. Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFET;Acta Physica Sinica;2015
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