Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference15 articles.
1. Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric
2. Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs
3. Proton-induced defect generation at the Si-SiO/sub 2/ interface
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1. Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET;Chinese Physics B;2014-11
2. Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor;Acta Physica Sinica;2011
3. Electrical and optical properties of Cu-Al-O thin films sputtered using non-stoichiometric target;Acta Physica Sinica;2011
4. Study on the negative bias temperature instability effect under dynamic stress;Chinese Physics B;2010-11
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