Study on the negative bias temperature instability effect under dynamic stress
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference14 articles.
1. The role of hydrogen in negative bias temperature instability of pMOSFET
2. Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor
3. Investigation and Modeling of Interface and Bulk Trap Generation During Negative Bias Temperature Instability of p-MOSFETs
4. Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET;Chinese Physics B;2015-09-29
2. Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET;Chinese Physics B;2014-05
3. Effects of stress conditions on the generation of negative bias temperature instability-associated interface traps;Chinese Physics B;2013-11
4. Flat-roof of dynamic equilibrium phenomenon in static negative biase temperature instability effect on power metal-oxide-semiconductor field-effect transistor;Acta Physica Sinica;2013
5. NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions;Microelectronics Reliability;2011-09
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