Effects of stress conditions on the generation of negative bias temperature instability-associated interface traps
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/22/11/117311/pdf
Reference14 articles.
1. A thorough investigation of MOSFETs NBTI degradation
2. The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors
3. The negative bias temperature instability in MOS devices: A review
4. Study on the negative bias temperature instability effect under dynamic stress
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1. Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process;Chinese Physics B;2023-12-01
2. Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET;Chinese Physics B;2015-09-29
3. Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET;Chinese Physics B;2014-05
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