The role of hydrogen in negative bias temperature instability of pMOSFET
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/15/4/028/pdf
Reference14 articles.
1. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
2. Hot-carrier degradation characteristics and explanation in 0.25 μm PMOSFETs
3. Investigation and Modeling of Interface and Bulk Trap Generation During Negative Bias Temperature Instability of p-MOSFETs
4. Generalized diffusion-reaction model for the low-field charge-buildup instability at the Si-SiO2interface
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4. Low voltage substrate current: a monitor for interface states generation in ultra-thin oxide n-MOSFETs under constant voltage stresses;Chinese Physics;2007-11
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