Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric-Reference-Cited by-同舟云学术

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Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric

Published:2005-10 Issue:10 Volume:26 Page:758-760
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yang T.,Shen C.,Li M.F.,Ang C.H.,Zhu C.X.,Yeo Y.-C.,Samudra G.,Kwong D.-L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/32347/01510751.pdf?arnumber=1510751

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