Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer-Reference-Cited by-同舟云学术

Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer

Published:2020-07-21 Issue:3 Volume:128 Page:033302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nunomura Shota¹²^ORCID,Sakata Isao²^ORCID,Sakakita Hajime¹^ORCID,Koga Kazunori³⁴^ORCID,Shiratani Masaharu³^ORCID

Affiliation:

1. Research Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

2. Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

3. Faculty of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan

4. Center for Novel Science Initiatives, National Institutes of Natural Sciences, 4-3-13 Toranomon, Minato-ku, Tokyo 105-0001, Japan

Funder

Japan Society for the Promotion of Science

New Energy and Industrial Technology Development Organization

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0011563

Reference74 articles.