Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation-Reference-Cited by-同舟云学术

Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation

Published:2010-11 Issue:11 Volume:19 Page:117307
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Xue Shou-Bin,Huang Ru,Huang De-Tao,Wang Si-Hao,Tan Fei,Wang Jian,An Xia,Zhang Xing

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference18 articles.

1. Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET

2. Effect of STI-induced mechanical stress on leakage current in deep submicron CMOS devices

3. Isoscaling of projectile-like fragments

4. Ionizing radiation induced leakage current on ultra-thin gate oxides

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