Heavy Ion Displacement Damage Effect in Carbon Nanotube Field Effect Transistors-Reference-Cited by-同舟云学术

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Heavy Ion Displacement Damage Effect in Carbon Nanotube Field Effect Transistors

Published:2023-02-15 Issue:8 Volume:15 Page:10936-10946
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lu Peng¹^ORCID,Zhu Maguang²³,Zhao Peixiong⁴^ORCID,Fan Chenwei²,Zhu Huiping¹,Gao Jiantou¹^ORCID,Yang Can¹,Han Zhengsheng¹^ORCID,Li Bo¹^ORCID,Liu Jie⁴^ORCID,Zhang Zhiyong²^ORCID

Affiliation:

1. Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China

2. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China

3. School of Integrated Circuits, Nanjing University, Qixia District, Nanjing, Jiangsu 210023, China

4. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c20005

Reference62 articles.

1. A 14nm logic technology featuring 2^nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm² SRAM cell size

2. A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate and cobalt local interconnects

3. 5nm CMOS Production Technology Platform featuring full-fledged EUV, and High Mobility Channel FinFETs with densest 0.021µm2 SRAM cells for Mobile SoC and High Performance Computing Applications

4. 28nm FDSOI technology platform for high-speed low-voltage digital applications

5. 14nm FDSOI technology for high speed and energy efficient applications

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Displacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors;ACS Applied Electronic Materials;2024-07-17

2. Study on displacement damage effect of highly charged ions in carbon nanotube field-effect transistor;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-07

3. Swift heavy ion irradiation-driven energy band engineering and its profound influence on the photoresponse of β-Ga2O3 ultraviolet photodetectors;Applied Physics Letters;2024-04-08

4. Carbon-based cryoelectronics: graphene and carbon nanotube;Chip;2023-12

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