Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal–oxide–semiconductor field-effect transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference22 articles.
1. Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs
2. Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric
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1. Identification of Channel Hot Carrier Stress-Induced Oxide Traps Leading to Random Telegraph Signals in pMOSFETs;IEEE Transactions on Electron Devices;2021-02
2. Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET;Chinese Physics B;2014-11
3. Effect of body bias on negative bias temperature instability in pMOSFET with SiON gate dielectrics;Solid-State Electronics;2014-01
4. Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs;Chinese Physics B;2011-11
5. Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing;Chinese Physics B;2011-01
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