Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/27/4/047305/pdf
Reference28 articles.
1. Study on mechanism of current collapse and knee voltage drift for AlGaN/GaN HEMTs
2. Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors
3. Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs
4. High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4 gate dielectrics
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Simulation of AlGaN/GaN MISFET With 3.6-GW/cm2 High FOM by SIPOS Field Plates Electric Field Modulation;IEEE Transactions on Electron Devices;2023-02
2. Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer;IEEE Journal of the Electron Devices Society;2022
3. Study of GaN-Based Superjunction CAVET with Dipole Layer to Further Improve On-Resistance and Breakdown Voltage;Journal of Electronic Materials;2021-10-26
4. Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance;IEEE Access;2021
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