Simulation of AlGaN/GaN MISFET With 3.6-GW/cm2 High FOM by SIPOS Field Plates Electric Field Modulation
Author:
Affiliation:
1. Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China
Funder
Science Foundation for Distinguished Young Scholars of Shaanxi Province
111 Project B
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10025571/09994650.pdf?arnumber=9994650
Reference30 articles.
1. Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions
2. Vertical GaN Power Transistor With Intrinsic Reverse Conduction and Low Gate Charge for High-Performance Power Conversion
3. Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure
4. 1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability
5. 100 A Vertical GaN Trench MOSFETs with a Current Distribution Layer
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