Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure

Author:

Li YuanORCID,Xu Liang,Guo Zhiyou,Sun Huiqing

Abstract

In this article, an innovative GaN-based trench current-aperture vertical electron transistor (CAVET) with a stepped doping microstructure is proposed and studied using Silvaco-ATLAS. According to the simulation and analyzed characteristics, the best performance renders a remarkable Baliga’s figure of merit (FOM) of 4.767 GW·cm2 owing to the modulation of the electric-field distribution. By adjusting the size of the stepped doping microstructure and doping concentration in the GaN drift, the maximum optimized result can achieve a relatively high breakdown voltage (BV) of 2523 V with a very low specific on-resistance (Ron,sp) of 1.34 mΩ·cm2, or the BV can be improved to 3024 V with a specific on-resistance (Ron,sp) of 2.08 mΩ·cm2. Compared with the conventional superjunction GaN-based trench CAVET, the newly demonstrated structure can achieve a 43% reduction in Ron,sp and increase by almost 20% the original BV. These results indicate the superiority of using the stepped doping microstructure in a trench CAVET to improve the BV and decrease Ron,sp, providing a reference for further development of GaN-based CAVETs.

Funder

Key-Area Research and Development Program of Guangdong Province

Foshan Science and Technology Bureau

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

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