Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/12/127305/pdf
Reference22 articles.
1. Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator
2. Mechanism of current collapse removal in field-plated nitride HFETs
3. Influence of Field Plate on the Transient Operation of the AlGaN/GaN HEMT
4. Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors
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2. A novel small-signal equivalent circuit model for GaN HEMTs incorporating a dual-field-plate;Journal of Semiconductors;2024-05-01
3. Enhance the AlGaN/GaN HEMTs Device Breakdown Voltage by Implementing Field Plate: Simulation Study;Lecture Notes in Electrical Engineering;2024
4. Optimization of Dual Field Plate AlGaN/GaN HEMTs Using Artificial Neural Networks and Particle Swarm Optimization Algorithm;IEEE Transactions on Device and Materials Reliability;2023-06
5. Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications;physica status solidi (a);2023-05-23
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