Enhance the AlGaN/GaN HEMTs Device Breakdown Voltage by Implementing Field Plate: Simulation Study
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-9005-4_17
Reference10 articles.
1. Islam N et al (2022) Reliability, applications and challenges of GaN HEMT technology for modern power devices: a review. Crystals 12(11):1581
2. Mishra UK, Parikh P, Wu Y-F (2002) AlGaN/GaN HEMTs-an overview of device operation and applications. Proceed IEEE 90(6):1022–1031
3. Meneghini M et al (2021) GaN-based power devices: physics, reliability, and perspectives. J Appl Phys 130(18):181101
4. Saito W et al (2010) Field-plate structure dependence of current collapse phenomena in high-voltage GaN-HEMTs. IEEE Electr Dev Lett 31(7):659–661
5. Akiyama S et al (2019) Analysis of breakdown voltage of field-plate AlGaN/GaN HEMTs as affected by buffer layer’s acceptor density. Jpn J Appl Phys 58(6):068003
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