Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications
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Published:2023-05-23
Issue:16
Volume:220
Page:
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ISSN:1862-6300
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Container-title:physica status solidi (a)
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language:en
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Short-container-title:Physica Status Solidi (a)
Author:
Wu Jui-Sheng1ORCID,
Weng You-Chen2,
Yang Tsung-Ying2,
Wu Chia-Hsun1,
Lee Chih-Chieh1,
Iwai Hiroshi2,
Chang Edward Yi12ORCID
Affiliation:
1. Department of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu 300 Taiwan
2. International College of Semiconductor Technology National Yang Ming Chiao Tung University Hsinchu 300 Taiwan
Abstract
Aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructure devices have proven to be highly effective for high‐frequency power amplifiers and power switching applications with improved performance compared to those made with traditional silicon technology and other advanced semiconductor technologies. The development of enhancement‐mode (E‐mode) AlGaN/GaN high electron mobility transistors (HEMTs) and metal–insulator–semiconductor HEMTs (MIS‐HEMTs) has been a focus in recent years due to their potential applications. Arising from the concept of a flash‐memory‐like hybrid ferroelectric charge storage structure, the high‐performance hybrid ferroelectric charge storage gate (FEG) GaN HEMT has gradually gained a great deal of attention due to the concept being a useful and versatile tool to realize E‐mode operations. This article attempts to review the latest progresses in this technology, including alternative improvements and device characteristics. Future challenges for the E‐mode FEG‐HEMT are also discussed.
Funder
Ministry of Education
Ministry of Science and Technology, Taiwan
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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