Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/6/067305/pdf
Reference28 articles.
1. Analysis of deep levels inn‐type GaN by transient capacitance methods
2. Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2Ga0.8N/GaN interface and the rapid thermal annealing effect
3. Deep centers in n-GaN grown by reactive molecular beam epitaxy
4. As-grown deep-level defects in n-GaN grown by metal–organic chemical vapor deposition on freestanding GaN
5. Electron capture behaviors of deep level traps in unintentionally doped and intentionally dopedn-type GaN
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Effect of Ionization Damage on Displacement Damage in AlGaN/GaN HEMTs;IEEE Transactions on Nuclear Science;2022-10
2. Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy;Semiconductor Science and Technology;2022-08-08
3. The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method;IEEE Transactions on Nuclear Science;2022-05
4. Effects of Ionization and Displacement Damage in AlGaN/GaN HEMT Devices Caused by Various Heavy Ions;IEEE Transactions on Nuclear Science;2021-06
5. Analysis of hole-like traps in deep level transient spectroscopy spectra of AlGaN/GaN heterojunctions;Journal of Physics D: Applied Physics;2020-02-28
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3