Electron capture behaviors of deep level traps in unintentionally doped and intentionally dopedn-type GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1586981
Reference21 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Continuous Output Beam Steering in Vertical-Cavity Surface-Emitting Lasers with Two p-Type Electrodes by Controlling Injection Current Profile
3. Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films
4. Deep States in GaN Studied by Thermally Stimulated Current Spectroscopy
5. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
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