As-grown deep-level defects in n-GaN grown by metal–organic chemical vapor deposition on freestanding GaN-Reference-Cited by-同舟云学术

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As-grown deep-level defects in n-GaN grown by metal–organic chemical vapor deposition on freestanding GaN

Published:2012-09 Issue:5 Volume:112 Page:053513
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chen Shang,Honda Unhi,Shibata Tatsunari,Matsumura Toshiya,Tokuda Yutaka,Ishikawa Kenji,Hori Masaru,Ueda Hiroyuki,Uesugi Tsutomu,Kachi Tetsu

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4748170

Reference27 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

3. Thin films and devices of diamond, silicon carbide and gallium nitride

4. InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates

5. Electron beam and optical depth profiling of quasibulk GaN

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3. Numerical investigations into the impact of substrate defects on a grooved GaN-based ultraviolet phototransistor with an AlGaN polarization gate;Applied Optics;2024-06-27

4. Investigation into the impact of bulk defects in the drift layer on the electrical properties of GaN-based trench Schottky barrier diodes;Japanese Journal of Applied Physics;2024-05-01

5. Investigation of carbon-related complexes in highly C-doped GaN grown by metalorganic vapor phase epitaxy;Japanese Journal of Applied Physics;2024-04-01

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