The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method-Reference-Cited by-同舟云学术

The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

Author:

Wan Pengfei¹^ORCID,Yang Jianqun¹,Lv He²^ORCID,Guan Enhao¹,Li Huyang¹,Lv Ling³^ORCID,Xu Xiaodong⁴,Wei Yadong⁴,Song Yang¹,Li Weiqi⁴,Li Xingji¹^ORCID

Affiliation:

1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, China

2. China Aerospace Components Engineering Center, Beijing, China

3. School of Microelectronics, Xidian University, Xi’an, China

4. School of Physics, Harbin Institute of Technology, Harbin, China

Funder

Foundation of Science and Technology on Reliability Physics and Application of Electronic Component Laboratory

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

Reference40 articles.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of radiation defects in gallium nitride using deep level transient spectra and first principles methods;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-12

4. Location identify of EC-0.9 eV trap in AlGaN/GaN high electron mobility transistors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-02