Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures-Reference-Cited by-同舟云学术

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Published:2016-04-28 Issue:16 Volume:119 Page:165704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhang Z.¹^ORCID,Cardwell D.¹^ORCID,Sasikumar A.¹,Kyle E. C. H.²,Chen J.³,Zhang E. X.³,Fleetwood D. M.³,Schrimpf R. D.³^ORCID,Speck J. S.²,Arehart A. R.¹^ORCID,Ringel S. A.¹

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Department of Materials, University of California, Santa Barbara, California 93106-5050, USA

3. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA

Funder

Office of Naval Research (ONR)

Defense Threat Reduction Agency (DTRA)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4948298

Reference35 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. Radiation hardness of gallium nitride

3. dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

4. Review of radiation damage in GaN-based materials and devices

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of radiation defects in gallium nitride using deep level transient spectra and first principles methods;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-12

2. Trap characterization of high-growth-rate laser-assisted MOCVD GaN;Applied Physics Letters;2023-09-11

3. Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study;IEEE Transactions on Electron Devices;2023-08

4. Location identify of EC-0.9 eV trap in AlGaN/GaN high electron mobility transistors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-02

5. Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3;Journal of Applied Physics;2023-01-25