Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures-Reference-Cited by-同舟云学术

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Published:2016-04-28 Issue:16 Volume:119 Page:165704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhang Z.¹^ORCID,Cardwell D.¹^ORCID,Sasikumar A.¹,Kyle E. C. H.²,Chen J.³,Zhang E. X.³,Fleetwood D. M.³,Schrimpf R. D.³^ORCID,Speck J. S.²,Arehart A. R.¹^ORCID,Ringel S. A.¹

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Department of Materials, University of California, Santa Barbara, California 93106-5050, USA

3. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA

Funder

Office of Naval Research (ONR)

Defense Threat Reduction Agency (DTRA)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4948298

Reference35 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. Radiation hardness of gallium nitride

3. dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

4. Review of radiation damage in GaN-based materials and devices

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