High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing*

Author:

Zan Ying,Li Yong-Liang,Cheng Xiao-Hong,Zhao Zhi-Qian,Liu Hao-Yan,Hu Zhen-Hua,Du An-Yan,Wang Wen-Wu

Abstract

A high crystalline quality of SiGe fin with an Si-rich composition area using the replacement fin processing is systematically demonstrated in this paper. The fin replacement process based on a standard FinFET process is developed. A width of less than 20-nm SiGe fin without obvious defect impact both in the direction across the fin and in the direction along the fin is verified by using the high angle annular dark field scanning transmission electron microscopy and the scanning moiré fringe imaging technique. Moreover, the SiGe composition is inhomogenous in the width of the fin. This is induced by the formation of {111} facets. Due to the atomic density of the {111} facets being higher, the epitaxial growth in the direction perpendicular to these facets is slower than in the direction perpendicular to {001}. The Ge incorporation is then higher on the {111} facets than on the {001} facets. So, an Si-rich area is observed in the central area and on the bottom of SiGe fin.

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Novel SiGe Fin-on-insulator FinFET Device with a SiN Spacer Protection Scheme;2022 7th International Conference on Integrated Circuits and Microsystems (ICICM);2022-10-28

2. A Novel FinFET Device with a Four-Period Vertically Stacked SiGe/Si Fin;2022 7th International Conference on Integrated Circuits and Microsystems (ICICM);2022-10-28

3. Integration of Si0.7Ge0.3 fin onto a bulk-Si substrate and its P-type FinFET device fabrication;Semiconductor Science and Technology;2021-10-22

4. Novel Si/SiGe fin on insulator fabrication on bulk-Si substrate;Materials Research Express;2021-07-01

5. Fabrication of High-Mobility Si0.7Ge0.3 Channel FinFET for Optimization of Device Electrical Performance;ECS Journal of Solid State Science and Technology;2021-07-01

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