Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by high-pressure deuterium anneal-Reference-Cited by-同舟云学术

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Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by high-pressure deuterium anneal

Published:2015-06 Issue: Volume: Page:
ISSN:
Container-title:2015 Symposium on VLSI Technology (VLSI Technology)
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Author:

Mertens H.,Ritzenthaler R.,Arimura H.,Franco J.,Sebaai F.,Hikavyy A.,Pawlak B. J.,Machkaoutsan V.,Devriendt K.,Tsvetanova D.,Milenin A. P.,Witters L.,Dangol A.,Vancoille E.,Bender H.,Badaroglu M.,Holsteyns F.,Barla K.,Mocuta D.,Horiguchi N.,Thean A.V-Y

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7198535/7223619/07223654.pdf?arnumber=7223654

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology;Nanomaterials;2024-05-09

2. Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance;ACS Nano;2023-10-12

3. Improved SOI FinFETs Performance With Low-Temperature Deuterium Annealing;IEEE Transactions on Electron Devices;2023-07

4. SiGe Fin field effect transistor (FET) with STI liner skipping and channel passivation engineering;Journal of Materials Science: Materials in Electronics;2023-02

5. Bulk-fin field-effect transistor-based capacitorless dynamic random-access memory and its immunity to the work-function variation effect;Japanese Journal of Applied Physics;2023-01-10

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