Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect-Reference-Cited by-同舟云学术

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Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect

Published:2015-06 Issue: Volume: Page:
ISSN:
Container-title:2015 Symposium on VLSI Technology (VLSI Technology)
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Author:

Witters L.,Mitard J.,Loo R.,Demuynck S.,Chew S.A.,Schram T.,Tao Z.,Hikavyy A.,Sun J.W.,Milenin A. P.,Mertens H.,Vrancken C.,Favia P.,Schaekers M.,Bender H.,Horiguchi N.,Langer R.,Barla K.,Mocuta D.,Collaert N.,Thean A.V-Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7198535/7223619/07223701.pdf?arnumber=7223701

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs;IEEE Transactions on Device and Materials Reliability;2023-03

2. Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al₂O₃/GeO_x Gate Stacks;IEEE Journal of the Electron Devices Society;2023

3. A Novel SiGe Fin-on-insulator FinFET Device with a SiN Spacer Protection Scheme;2022 7th International Conference on Integrated Circuits and Microsystems (ICICM);2022-10-28

4. Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling;Journal of Applied Physics;2022-07-14

5. Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs;IEEE Transactions on Nuclear Science;2022-03

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