Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/22/11/117307/pdf
Reference13 articles.
1. The 1.6-kV AlGaN/GaN HFETs
2. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers
3. AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
4. Development and characteristic analysis of a field-plated Al 2 O 3 /AlInN/GaN MOS—HEMT
5. Electric-stress reliability and current collapse of different thickness SiN x passivated AlGaN/GaN high electron mobility transistors
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1. Enhance the AlGaN/GaN HEMTs Device Breakdown Voltage by Implementing Field Plate: Simulation Study;Lecture Notes in Electrical Engineering;2024
2. TCAD study of high breakdown voltage AlGaN/GaN HEMTs with embedded passivation layer;Journal of Physics D: Applied Physics;2022-07-08
3. Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2021-10
4. Evaluation by Simulation of AlGaN/GaN Schottky Barrier Diode (SBD) With Anode-Via Vertical Field Plate Structure;IEEE Transactions on Electron Devices;2018-06
5. Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures;Chinese Physics B;2016-07-26
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