Evaluation by Simulation of AlGaN/GaN Schottky Barrier Diode (SBD) With Anode-Via Vertical Field Plate Structure-Reference-Cited by-同舟云学术

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Evaluation by Simulation of AlGaN/GaN Schottky Barrier Diode (SBD) With Anode-Via Vertical Field Plate Structure

Published:2018-06 Issue:6 Volume:65 Page:2552-2557
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Ying^ORCID,Li Zhi-Yuan,Hao Yue,Luo Xin,Fang Jun-Peng,Ma Ya-chao,Yu Cheng-hao,Cao Fei

Funder

Excellent Youth Foundation of Zhejiang Province of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8359231/08340199.pdf?arnumber=8340199

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