Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/8/087304/pdf
Reference40 articles.
1. Metal semiconductor field effect transistor based on single crystal GaN
2. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
3. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
4. AlGaN/GaN Power HFET on Silicon Substrate With Source-Via Grounding (SVG) Structure
5. Depth and thermal stability of dry etch damage in GaN Schottky diodes
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