A simulation study of field plate termination in Ga 2 O 3 Schottky barrier diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/27/12/127302/pdf
Reference17 articles.
1. Recent progress in Ga2O3power devices
2. High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
3. Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics
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