Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs)
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference10 articles.
1. Electron-irradiation-induced deep level in n-type GaN
2. Defect Donor and Acceptor in GaN
3. The role of unintentional acceptor concentration on the threshold voltage of modulation-doped field-effect transistors
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method;IEEE Transactions on Nuclear Science;2022-05
2. Single-molecule tunnel magnetoresistance of p-type doped polypyrrole;Organic Electronics;2019-06
3. Proton Irradiation Effect on InP-Based High Electron Mobility Transistor by Numerical Simulation with Non-Uniform Induced Acceptor-Like Defects;physica status solidi (RRL) - Rapid Research Letters;2018-04-18
4. 60Coγ-radiation effects on the ideality factor of AlxGa1?xN p-i-n solar-blind detector with high content of aluminum;Acta Physica Sinica;2013
5. Nonlinearity exponent in low dimensional nanotubes and nanowires;Results in Physics;2013
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3