The role of unintentional acceptor concentration on the threshold voltage of modulation-doped field-effect transistors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/789/00019950.pdf?arnumber=19950
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs);Chinese Physics B;2009-07
2. Effect of non-abrupt doping profiles on the carrier sheet density in one-side modulation-doped GaAs/AlGaAs quantum wells;physica status solidi (c);2004-08
3. Effect of residual acceptors on electron mobility in single asymmetric quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2003-04
4. The role of background concentration in AlInAs/GaInAs/InP based double heterojunction HEMTs;Solid-State Electronics;1998-10
5. The role of acceptor density in GaAsAlGaAs based quantum well HEMTs;Solid-State Electronics;1997-06
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