Proton Irradiation Effect on InP-Based High Electron Mobility Transistor by Numerical Simulation with Non-Uniform Induced Acceptor-Like Defects
Author:
Affiliation:
1. School of Physics and Engineering; Zhengzhou University; Zhengzhou 450001 P. R. China
2. Institute of Microelectronics; Chinese Academy of Sciences; Beijing 100029 P. R. China
3. China Academy of Space Technology; Beijing 100086 P. R. China
Funder
National Natural Science Foundation of China
Zhengzhou University
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference18 articles.
1. W‐band dual‐channel receiver with active power divider and temperature‐compensated circuit
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3. Enhancement of $f_{\mathrm {max}}$ to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs
4. Ultra-thin 20 nm-PECVD-Si 3 N 4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance
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1. Equivalent small-signal model of InP-based HEMTs with accurate radiation effects characterization;Journal of Applied Physics;2023-05-25
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