The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference16 articles.
1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
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1. Growth modification via indium surfactant for InGaN/GaN green LED;Semiconductor Science and Technology;2023-02-17
2. Optical Properties of InGaN/GaN QW with the Same Well-Plus-Barrier Thickness;Crystals;2022-01-15
3. Growth of AlGaN-based multiple quantum wells on SiC substrates;Journal of Materials Science: Materials in Electronics;2018-02-24
4. Exciton–phonon interaction in Al 0.4 Ga 0.6 N/Al 0.53 Ga 0.47 N multiple quantum wells;Chinese Physics B;2016-07-26
5. Role of defects in the thermal droop of InGaN-based light emitting diodes;Journal of Applied Physics;2016-03-07
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