Exciton–phonon interaction in Al 0.4 Ga 0.6 N/Al 0.53 Ga 0.47 N multiple quantum wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/8/087801/pdf
Reference28 articles.
1. Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells
2. High power AlGaN ultraviolet light emitters
3. Surface potential effect on excitons in AlGaN/GaN quantum well structures
4. A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN
5. A 340-nm-band ultraviolet laser diode composed of GaN well layers
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