Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference26 articles.
1. Long-Wavelength Infrared Semiconductor Lasers
2. Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm
3. GaInAsSb–AlGaAsSb Distributed Feedback Lasers Emitting Near 2.4>tex<$muhbox m$>/tex<
4. InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 μm
5. 2.1-$\mu$m-Wavelength InGaAs Multiple-Quantum-Well Distributed Feedback Lasers Grown by MOVPE Using Sb Surfactant
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy;Optics Express;2015-03-24
2. Step instability of the In0.2Ga0.8As (001) surface during annealing;Chinese Physics B;2012-04
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