InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 μm
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference16 articles.
1. Novel Helmholtz-based photoacoustic sensor for trace gas detection at ppm level using GaInAsSb/GaAlAsSb DFB lasers
2. Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves
3. Continuous Wave Performance and Tunability of MBE Grown 2.1 μm InGaAsSb/AlGaAsSb MQW lasers
4. Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm
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1. Effect of Ridge Width on the Lasing Characteristics of Triangular and Rectangular InAs/In0.53Ga0.47As Quantum Well Lasers;Frontiers in Materials;2022-01-26
2. InP-based antimony-free lasers and photodetectors in 2 similar to 3 mu m band;J INFRARED MILLIM W;2016
3. Low Operating Voltage and Small Gain Slope of InGaAs APDs With p-Type Multiplication Layer;IEEE Photonics Technology Letters;2015-03-15
4. High-performance InP-based InAs triangular quantum well lasers operating beyond 2 μm;SPIE Proceedings;2014-02-27
5. Fabrication of 0.3-μm T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition;Science China Physics, Mechanics and Astronomy;2012-02-25
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