Author:
Li HaiOu,Huang Wei,Li Qi,Li SiMin,Jiang Xi,Tang ChakWah,Lau KeiMay,Zhang TianWen
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Reference12 articles.
1. Lau K M, Tang C W, Li H O, et al. AlInAs/GaInAs mHEMTs on silicon substrates grown by MOCVD. IEDM Tech Dig, 2008, 723–726
2. Hudaitt M K, Dewey G, Datta S, et al. Transistor on silicon substrate using thin (< 2 gim) composite buffer architecture for high-speed and low-voltage (0.5 V) logic applications. IEDM Tech Dig, 2007, 625–628
3. Yamashita Y, Endoh A, Shinohara K, et al. Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultrahigh fT of 562 GHz. IEEE Electron Device Lett, 2002, 23(10): 573–575
4. Kim D H, del Alamo J A, Lee J H, et al. Flexible, large-area sensors and actuators with organic transistor integrated circuits. IEDM Tech Dig, 2005, 455–458
5. Pan N, Elliott J, Hendriks H, et al. InAlAs/InGaAs high electron mobility transistors on low temperature InAlAs buffer layers by metalorganic chemical vapor deposition. Appl Phys Lett, 1995, 66: 212–214